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Pc1d help
Pc1d help




pc1d help
  1. #Pc1d help code#
  2. #Pc1d help license#

Taking advantage of this, by forcing the steady-state solution to be equal to the final solution of a previous transient simulation, a subsequent transient simulation can be continued from where the previous one ends. The first two steps of a transient simulation find the thermal equilibrium and steady-state solutions. To achieve this, we investigate the mechanism of how PC1D performs a transient simulation. Since this is not possible in PC1D, we devise a method which relies on storing data of the final transient simulation, process this data and then load the processed data back into PC1D to allow it to restart a simulation based on the conditions of the previous simulation.

#Pc1d help code#

In this paper, we will present a method which overcomes the time step limitation of PC1D without changing the source code of PC1D.Ī straightforward method to overcome the time step limitation imposed by PC1D would be to store the final solution of a given simulation and then load it back as the initial condition for a subsequent simulation. Peer-review under responsibility of the scientific committee of the SiliconPV 2014 conference doi: 10.1016/j.egypro.2014.08.105Īnd compiled.

pc1d help pc1d help

#Pc1d help license#

This is an open access article under the CC BY-NC-ND license (). This is a limitation within the PC1D source code set by the size of the cache memory at the time the program was written It is impossible for users to perform simulations that require both long duration and small time steps. Conversely, if small time steps are desired, only short duration simulations can be achieved. As a result, if long duration simulations are required, big time steps should be chosen. However, one limitation of PC1D is that the number of time steps in transient excitation mode is limited to 200. It is widely used as a simulation tool for photovoltaic research and industry, not only helping users to understand the fundamental mechanism and operation of solar cells, but also efficiently giving reliable and predictable results for research purposes. PC1D is a computer program used for modelling crystalline semiconductor devices, with emphasis on photovoltaic devices. Peer-review under responsibility of the scientific committee of the SiliconPV 2014 conference Keywords: PC1D transient time step limit The proposed method allows simulations over long times with high time precision, which is currently not possible in PC1D in transient excitation mode. By comparing the results obtained from PC1D using the proposed method with results obtained from a finite element analysis, the correctness of the method is confirmed. This paper presents a method to overcome the time step limitation of PC1D in the transient excitation mode without changing the source code of PC1D. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia The data related to PC1D based simulation of internal and external quantum efficiencies with and without antireflection effects of ZnO as well as the effects of doping level in p-Si on current–voltage characteristics have been provided.^^^ Available online at ^B/ ScienceDirectĤth International Conference on Silicon Photovoltaics, SiliconPV 2014Ī method to overcome the time step limitation of PC1D in transient Apart from the information we already published, we provide additional data related to growth of ZnO (with and without Ga incorporation) layers using MOCVD. There are several reports presenting use of ZnO as window/antireflection coating in solar cells (Mansoor et al., 2015 Haq et al., 2014 Hussain et al., 2014 Matsui et al., 2014 Ding et al., 2014, ,, , ) but, here, we provide data specifically related to simultaneous use of ZnO as n-layer and AR coating. The ZnO layer will act as an active n-layer as well as antireflection (AR) coating saving considerable processing cost. This data article is related to our recently published article (Hussain et al., in press ) where we have proposed a new solar cell model based on n-ZnO as front layer and p-Si as rear region.






Pc1d help